The field-effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a field effect transistor notes "channel" in a semiconductor material. FETs are sometimes used as voltage-controlled resistors.
The terminals in FET are called gate, drain and source. (Compare these to the terminology used for BJTs: base, collector and emitter.) The voltage applied between the gate and source terminals modulates the current between the source and drain terminals.
Most FETs are made with conventional bulk semiconductor processing techniques, using the single crystal semiconductor wafer as the active region, or channel.
Types of field-effect transistors
The FET is simpler in concept than the bipolar transistor and can be constructed from a wide range of materials. The different types of field-effect transistors can be distinguished by the method of isolation between channel and gate:
- The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) utilizes an isolator (typically SiO2).
- Power MOSFETs become less conductive with increasing temperature and can therefore be thought of as n-channel devices by default. Silicon devices that use electrons, rather than holes, as the majority carriers are slightly faster and can carry more current than their P-type counterparts. The same is true in GaAs devices.
- The JFET (Junction Field-Effect Transistor) uses a p-n junction as the gate.
- The MESFET (Metal-Semiconductor Field-Effect Transistor) substitutes the p-n-junction of the JFET with a Schottky barrier; used in GaAs and other III-V semiconductor materials.
- Using bandgap engineering in a ternary semiconductor like AlGaAs gives a HEMT (High Electron Mobility Transistor), also named an HFET (heterostructure FET). The fully depleted wide-band-gap material forms the isolation.
- TFTs (thin-film transistor) use amorphous silicon, polycrystalline silicon or other amorphous semiconductors as body material.
- A subgroup of TFTs are organic field effect transistors that are based on organic semiconductors and often apply organic gate insulators and electrodes.
- The channel region of any FET is either doped to produce n-type semiconductor, giving an "N-channel" device, or with p-type to give a "P-channel" device. The doping determines the polarity of gate operation.
FET Operation
The shape of the conducting what is a field effect transistor channel in a FET is altered when a potential voltage is applied to the gate terminal (potential relative to either source or drain.) In an how to measure field effect transistor n-channel device, a negative gate voltage causes a depletion region to expand in size and encroach on field effect transistor basics the channel from the side, narrowing the channel. If the depletion region completely closes the channel, the resistance of the channel becomes field effect transistor works very large, and the FET is effectively turned off. Positive gate voltage attracts electrons from the surrounding semiconductor next to the gate, forming a conductive channel. At low source-to-drain voltages, small changes to the gate voltage will alter the channel resistance. In this mode the FET operates like a variable resistor. This mode is not employed when amplification is needed.
If a larger potential difference is applied between the source and drain terminals, this creates a significant current in the channel and produces a gradient of voltage potential from source to drain. This also causes the shape of the depletion region to become asymmetrical–one end of the channel becomes narrow. If the potential difference is large enough, the depletion region begins to close the channel. The FET is said to be in saturation. Rather than entirely blocking the electrons from flowing from source to drain, electrons flow through the depletion region in a controlled manner. Any attempted increase of the drain-to-source voltage will lengthen the depletion region, increasing the channel resistance proportionally with the applied drain-to-source voltage which causes the value of drain current to remain relatively shockley field effect transistor fixed. This mode of operation is called pinch-off. In this mode, the FET behaves as a constant-current source rather than as a resistor and can be used as a voltage amplifier. The value field effect transistor inventor of gate voltage determines the value of the constant current in the channel.
Uses
The most commonly used FET is the MOSFET. The CMOS (complementary metallic oxide semiconductor) process technology is metal oxide semiconductor field effect transistor the basis for modern digital integrated circuits. This process technology uses an arrangement where p-channel MOSFET and n-channel MOSFET (n and p being complementary MOSFET types) are connected in series such that when one is on, the other is off. In CMOS logic devices, the p-channel device pulls up the output and the n-channel device pulls down the output. The great advantage of CMOS circuits field effect transistor history is that they allow no current to flow (ideally), except during the transition field effect transistor applications from parts and preparation of organic field effect transistor one state to the other, which is very short. The gates are capacitive, and the charging and discharging of the gates each metal oxide field effect transistor time a transistor switches states is the primary source of power usage in fast CMOS logic circuits.
The fragile insulating layer of the MOSFET between the gate and channel makes it vulnerable to electrostatic damage during handling. This is not usually a problem after the device has been installed.
FETs can switch signals of either polarity on the source or drain terminals, if their amplitude is significantly less than the gate swing, as the devices are typically symmetrical. This makes FETs suitable for switching analog signals between paths (multiplexing). With this concept, one can construct a solid-state mixing board, field effect transistor for example.
The power MOSFET has a reverse-biased 'parasitic diode' shunting junction field effect transistor the conduction channel that has half the current capacity of the conduction channel. Sometimes this diode is used when driving inductive circuits, but in other cases it causes problems.
A more recent device for power control is the insulated-gate bipolar transistor, or IGBT. This has a control structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These have become quite popular.
See also
External links
- PBS The Field Effect Transistor
Electronics Topics
The field of electronics is the study and use of systems that operate by controlling the flow of electrons or other electrically charged particles in devices such as thermionic valves and semiconductors. The design and construction of electronic circuits to solve practical problems is part of the fields of electronic engineering, and the hardware design side of computer engineering. The study of new semiconductor devices and their technology is sometimes considered as a branch of physics.
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